SIA433EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
SiA433EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
100
I_D = 7.6 A
1.4
V_GS = 4.5 V
10
1.2
V_GS = 2.5 V
1.0
1
0.8
T_J = 150 °C
T_J = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.06
0.05
0.04
I_D = 7.6 A; T_J = 125 °C
I_D = 2.5 A; T_J = 125 °C
0.03
I_D = 2.5 A; T_J = 25 °C
0.02 ^{ID = 7.6 A; TJ = 25 °C}
0.01
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
0.1
0.0
1.1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
1.0
0.9
0.8
I_D = 250 µA
0.7
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100 _{Limited by RDS(on)*}
10
100 µs
1 ms
1
10 ms
0.1 _{TA = 25 °C}
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09