SIA430DJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
25
SiA430DJ
Vishay Siliconix
28
20
21
15
14
Package Limited
10
7
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
0
25
50
75
100 125 150
T_J - Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68685
S-81173-Rev. A, 26-May-08
www.vishay.com
5