SIA430DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
5
V_GS = 10 thru 5 V
V_GS = 4 V
32
4
SiA430DJ
Vishay Siliconix
T_C = - 55 °C
24
16
8
0
0.0
0.025
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
0.015
0.010
V_GS = 4.5 V
V_GS = 10 V
0.005
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 12 A
8
6
V_DS = 10 V
V_DS = 5 V
V_DS = 15 V
4
3
T_C = 125 °C
2
1
T_C = 25 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 7 A
1.4
V_GS = 10 V
1.2
1.0
2
0.8
0
0
3
6
9
12
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68685
S-81173-Rev. A, 26-May-08
www.vishay.com
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