SIA430DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

SiA430DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.055
10
T_J = 150 °C
1
T_J = 25 °C
0.045
0.035
I_D = 5 A
0.1
0.01
T_J = - 50 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
0.025
0.015
T_J = 125 °C
0.005
T_J = 25 °C
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.1
25
- 0.1
20
I_D = 1 mA
15
- 0.3
10
I_D = 250 µA
- 0.5
5
- 0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
10 µs
100 µs
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
DC
BVDSS
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68685
S-81173-Rev. A, 26-May-08