SIA429DJT_11 Datasheet, PDF (5/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
25
15
20
15
10
Package Limited
10
5
5
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
SiA429DJT
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67038
www.vishay.com
S11-0649-Rev. B, 11-Apr-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000