SIA429DJT_11 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.06
T_J = 150 °C
10
T_J = 25 °C
1
0.05
I_D = 1 A; T_J = 125 °C
0.04
I_D = 6 A; T_J = 125 °C
0.03
I_D = 6 A; T_J = 25 °C
0.02
I_D = 1 A; T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
0.01
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.7
25
0.6
20
I_D = 250 μA
0.5
15
0.4
10
0.3
5
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
100 μs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 67038
4
S11-0649-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000