SIA429DJT_11 Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
V_GS = 5 V thru 2 V
25
20
15
10
V_GS = 1.5 V
5
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.07
V_GS = 1.5 V
0.06
V_GS = 1.8 V
0.05
0.04
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
0
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 10 A
V_DS = 5 V
6
V_DS = 10 V
V_DS = 16 V
4
2
20
16
12
8
T_C = 25 °C
4
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3500
3000
2500
2000
C_iss
1500
1000
500
0
0
C_oss
C_rss
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.65
1.45
1.25
1.05
0.85
V_GS = 4.5 V; 2.5 V; I _D = 6 A
V_GS = 1.8 V; I_D = 6 A
V_GS = 1.5 V; I_D = 1 A
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.65
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67038
www.vishay.com
S11-0649-Rev. B, 11-Apr-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000