SI8816EDB Datasheet, PDF (5/8 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
Limited by R_DS(on)*
1
100 µs
1 ms
Si8816EDB
Vishay Siliconix
0.1
100 ms
0.01
0.1
T_A = 25 °C
BVDSS Limited
10 s
1 s, 10 ms
DC
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
2.5
0.8
2.0
0.6
1.5
0.4
1.0
0.2
0.5
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
0.0
25
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. B, 23-Feb-15
5
Document Number: 62834
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