SI8816EDB Datasheet, PDF (4/8 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
10
6
I_D = 1 A
V_DS = 15 V
V_DS = 7.5 V
4
1
V_DS = 24 V
2
Si8816EDB
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0
0
1
2
3
4
Q_g - Total Gate Charge (nC)
Gate Charge
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.6
1.5
V_GS = 10 V, 4.5 V, 3.7 V, 2.5 V; I_D = 1 A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.3
1.2
1.1
1.0
0.9
I_D = 250 μA
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.30
14
12
0.25
I_D = 1 A
10
0.20
8
0.15
T_J = 125 °C
6
4
0.10
T_J = 25 °C
2
0.05
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
0
0.001 0.01 0.1
1
10
100
1000
Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
S15-0346-Rev. B, 23-Feb-15
4
Document Number: 62834
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