SI8816EDB Datasheet, PDF (3/8 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

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Si8816EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.4
10^-2
1.2
10^-3
1.0
10^-4
0.8
T_J = 25 °C
10^-5
T_J = 150 °C
0.6
10^-6
0.4
T_J = 25 °C
10^-7
0.2
10^-8
0
0
3
6
9
12
15
18
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-9
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
V_GS = 5 V thru 2.5 V
12
V_GS = 2 V
9
6
V_GS = 1.5 V
3
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
8
6
4
2
0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.18
250
0.15
0.12
0.09
V_GS = 2.5 V
V_GS = 3.7 V
V_GS = 10 V
V_GS = 4.5 V
200
C_iss
150
100
50
C_oss
C_rss
0.06
0
2
4
6
8
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance vs. Drain-to-Source Voltage
S15-0346-Rev. B, 23-Feb-15
3
Document Number: 62834
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