SI7997DP_15 Datasheet, PDF (5/14 Pages) Vishay Siliconix – Dual P-Channel 30 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
60
80
45
60
Package Limited
30
40
15
20
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
Si7997DP
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66719
S10-1826-Rev. A, 09-Aug-10
www.vishay.com
5