SI7997DP_15 Datasheet, PDF (3/14 Pages) Vishay Siliconix – Dual P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
V_GS = 10 V thru 4 V
80
16
Si7997DP
Vishay Siliconix
60
V_GS = 3 V
40
20
0
0
0.010
1
2
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
0.006
0.004
V_GS = 4.5 V
V_GS = 10 V
0.002
0
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 7.5 V
6
V_DS = 15 V
4
V_DS = 24 V
2
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
12
8
4
0
0.0
8000
6000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
4000
2000
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 20 A
1.4
V_GS = 10 V
1.3
V_GS = 4.5 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66719
S10-1826-Rev. A, 09-Aug-10
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