SI7904BDN Datasheet, PDF (5/13 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
20
20
15
15
10
10
5
5
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
Si7904BDN
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74409
S-83050-Rev. B, 29-Dec-08
www.vishay.com
5