SI7904BDN Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Si7904BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.060
0.050
I_D = 7.1 A
25 °C
T_J = 150 °C
10
0.040
I_D = 7.1 A
125 °C
T_J = 25 °C
0.030
1
0
0.2
0.4
0.6
0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
0.3
0.020
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74409
S-83050-Rev. B, 29-Dec-08