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SI7904BDN Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET
Si7904BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
VGS = 5 thru 2 V
8
15
10
5
0
0.0
0.060
1.5 V
1V
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
TC = 125 °C
2
25 °C
- 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
0.050
VGS = 1.8 V
900
Ciss
0.040
0.030
VGS = 2.5 V
0.020
0
VGS = 4.5 V
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
VDS = 10 V
7
ID = 6 A
6
5
4
VDS = 16 V
ID = 6 A
3
2
1
0
0
3
6
9
12
15
18
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74409
S-83050-Rev. B, 29-Dec-08
600
300
Coss
0 Crss
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
ID = 7.1 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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