SI7884BDP-T1-E3 Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
60
50
60
40
40
Package Limited
30
20
20
10
0
0
0
25
50
75
100 125 150
0
T_C - Case Temperature (°C)
Current Derating*
Si7884BDP
Vishay Siliconix
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68395
S-82113-Rev. B, 08-Sep-08
www.vishay.com
5