SI7884BDP-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

Si7884BDP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.03
T_J = 150 °C
10
T_J = 25 °C
0.02
1
I_D = 16 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.3
I_D = 250 µA
T_J = 125 °C
0.01
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
T_A = 25 °C
40
0.0 ^ID ^{= 5 mA}
30
- 0.3
20
- 0.6
10
- 0.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
100 µs
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
0.1
T_A = 25 °C
Single Pulse
1
BVDSS
Limited
10
100 s, DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68395
S-82113-Rev. B, 08-Sep-08