SI7884BDP-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
V_GS = 10 thru 4 V
40
8
Si7884BDP
Vishay Siliconix
30
V_GS = 3 V
20
10
0
0.0
0.010
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
0.006
0.004
V_GS = 4.5 V
V_GS = 10 V
0.002
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 16 A
8
V_DS = 10 V
V_DS = 20 V
6
V_DS = 30 V
4
2
6
4
2
0
0
4000
3200
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
2400
1600
800
C_oss
C_rss
0
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 16 A
1.6
V_GS = 10 V
V_GS = 4.5 V
1.2
0.8
0
0
11
22
33
44
55
Q_g - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68395
S-82113-Rev. B, 08-Sep-08
www.vishay.com
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