SI7842DP Datasheet, PDF (5/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7842DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 5}
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
10
1
10 ^{- 1}
1
SCHOTTKY
Forward Voltage Drop
T_J = 150_C
0.1
30 V
24 V
0.01
T_J = 25_C
0.001
0.0001
0
200
25
50
75
100 125 150
T_J - Temperature (_C)
Capacitance
1
0.0
0.3
0.6
0.9
1.2
1.5
V_F - Forward Voltage Drop (V)
160
120
80
C_oss
40
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
www.vishay.com
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