SI7842DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7842DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.04
T_J = 150_C
10
I_D = 7.5 A
0.03
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
- 0.0
- 0.2
- 0.4
- 0.6
0.00
0
100
80
60
40
20
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 60_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71617
S-31728—Rev. B, 18-Aug-03