SI7842DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7842DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10 thru 4 V
16
3V
16
MOSFET
Transfer Characteristics
12
12
8
4
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
0.040
On-Resistance vs. Drain Current
8
T_C = 125_C
4
25_C
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
1000
Capacitance
0.032
0.024
0.016
0.008
V_GS = 4.5 V
V_GS = 10 V
800
C_iss
600
400
C_oss
200
C_rss
0.000
0
4
8
12
16
20
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 7.5 A
8
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 7.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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