SI7758DP Datasheet, PDF (5/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160
Si7758DP
Vishay Siliconix
128
96
Package Limited
64
32
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
125
3.0
100
2.4
75
1.8
50
1.2
25
0.6
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68696
S-81326-Rev. A, 09-Jun-08
www.vishay.com
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