SI7758DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
5
V_GS = 10 thru 4 V
64
4
48
3
Si7758DP
Vishay Siliconix
T_C = 25 °C
32
2
16
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0040
0.0035
0.0030
V_GS = 4.5 V
0.0025
V_GS = 10 V
0.0020
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
1
0
0
8500
6800
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
5100
3400
1700
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 20 A
1.5
1.3
1.1
V_GS = 10 V
V_GS = 4.5 V
2
0.9
0
0
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68696
S-81326-Rev. A, 09-Jun-08
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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