SI7758DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si7758DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.010
T_J = 150 °C
10
0.008
0.006
T_J = 25 °C
1
0.004
0.002
I_D = 20 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
10-2
160
30 V
10-3
120
10 V
20 V
10-4
80
10^-5
40
10^-6
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68696
S-81326-Rev. A, 09-Jun-08