SI7726DN Datasheet, PDF (5/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
T_J = 150 °C
10
0.04
Si7726DN
Vishay Siliconix
1
T_J = 25 °C
0.03
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
10-2
120
30 V
10-3
90
10 V
10^-4
60
20 V
10-5
30
10-6
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
0.01
T_A = 25 C
Single Pulse
0.1
1
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68600
S-81737-Rev. B, 04-Aug-08
www.vishay.com
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