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SI7726DN Datasheet, PDF (1/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si7726DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.0095 at VGS = 10 V
0.0125 at VGS = 4.5 V
ID (A)e
35
35
Qg (Typ.)
12.5 nC
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7726DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• SkyFET Monolithic TrenchFET® Power
MOSFET and Schottky Diode
• Low Thermal Resistance PowerPAK®
RoHS
COMPLIANT
Package with Small Size and Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converter
- Notebook
- POL
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
35e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
35e
14.9a, b
Pulsed Drain Current
TA = 70 °C
11.8a, b
A
IDM
60
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
35e
5.4a, b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
20
EAS
20
mJ
TC = 25 °C
52
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
33
3.8a, b
W
TA = 70 °C
2.4a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 50 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 68600
S-81737-Rev. B, 04-Aug-08
www.vishay.com
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