SI7726DN Datasheet, PDF (2/14 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7726DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
t ≤ 10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
Symbol
R_thJA
R_thJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 1 mA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 10 A
V_GS = 4.5 V, I_D = 7 A
Forward Transconductance^a
g_fs
V_DS = 10 V, I_D = 10 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 15 V, V_GS = 4.5 V, I_D = 10 A
f = 1 MHz
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_g = 1 Ω
Min.
Typ.
Max.
Unit
30
V
1.4
2.6
V
± 100
nA
0.016
0.15
mA
1.6
15
30
A
0.0077 0.0095
Ω
0.010 0.0125
40
S
1765
300
pF
100
28.5
43
12.5
19
nC
4.8
3.2
0.25
1.25
2.5
Ω
23
40
10
20
27
50
14
18
ns
10
20
8
16
22
40
8
16
www.vishay.com
2
Document Number: 68600
S-81737-Rev. B, 04-Aug-08