SI7674DP Datasheet, PDF (5/7 Pages) Vaishali Semiconductor – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
155
Si7674DP
Vishay Siliconix
124
93
62
Limited by Package
31
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
100
2.5
80
2.0
60
1.5
40
1.0
20
0.5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73562
S110212-Rev. C, 14-Feb-11
www.vishay.com
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