SI7674DP Datasheet, PDF (3/7 Pages) Vaishali Semiconductor – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
V_GS = 10 thru 4 V
50
40
30
20
10
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
0
0.0050
4500
0.0044
0.0038
V_GS = 4.5 V
3600
2700
Si7674DP
Vishay Siliconix
25 °C
T_C = 125 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0032
0.0026
V_GS = 10 V
0.0020
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
V_DS = 15 V
8
V_DS = 10 V
6
V_DS = 20 V
4
2
0
0
13
26
39
52
65
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73562
S110212-Rev. C, 14-Feb-11
1800
900
C_rss
0
0
6
C_oss
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.6
V_GS = 10 V
1.4
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3