SI7674DP Datasheet, PDF (4/7 Pages) Vaishali Semiconductor – N-Channel 30-V (D-S) MOSFET

Si7674DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
10
T_J = 150 °C
0.016
1
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.2
- 0.1
- 0.4
I_D = 5 mA
0.012
0.008
0.004
T_J = 25 °C
T_J = 125 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
- 0.7
I_D = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by
R_DS(on)*
10
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T_A = 25 °C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73562
S110212-Rev. C, 14-Feb-11