SI7457DP Datasheet, PDF (5/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
100
35
30
80
25 Package Limited
60
20
15
40
10
20
5
0
0
0
25
50
75
100 125 150
25
T_C - Case Temperature (°C)
Current Derating*
100
Si7457DP
Vishay Siliconix
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
10
1
0.000001 0.00001
0.0001
0.001
0.01
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73431
S09-0273-Rev. C, 16-Feb-09
www.vishay.com
5