SI7457DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

Si7457DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.08
T_J = 150 °C
10
0.07
0.06
0.05
T_A = 125 °C
T_A = 25 °C
0.04
T_J = 25 °C
0.03
1
0.0
0.2 0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.02
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.3
3.0
I_D = 250 µA
2.7
2.4
2.1
1.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by
10 ^RDS(on)^*
1
0.1
0.01
T_A = 25 °C
Single Pulse
35
30
25
20
15
10
5
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73431
S09-0273-Rev. C, 16-Feb-09