SI7457DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

Si7457DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
20
V_GS = 10 V thru 6 V
30
5V
16
25
20
12
15
8
10
4V
4
5
0
0
0.0
0.4
0.8
1.2
1.6
2.0
0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_A = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.040
0.039
0.038
0.037
V_GS = 6 V
0.036
0.035
V_GS = 10 V
0.034
0.033
0.032
0
5
10 15 20 25 30 35
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
7000
6000
C_iss
5000
4000
3000
2000
1000
C_oss
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 7.9 A
8
V_DS = 50 V
6
4
2
V_DS = 80 V
2.3
2.0
I_D = 7.9 A
1.7
1.4
1.1
0.8
V_GS = 10 V, 6 V
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73431
S09-0273-Rev. C, 16-Feb-09
www.vishay.com
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