SI7288DP Datasheet, PDF (5/13 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
Si7288DP
Vishay Siliconix
20
15
10
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
20
2.0
16
1.6
12
1.2
8
0.8
4
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
www.vishay.com
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