SI7288DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
V_GS = 10 V thru 4 V
40
8
Si7288DP
Vishay Siliconix
30
V_GS = 3 V
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.022
0.019
V_GS = 4.5 V
6
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
750
C_iss
600
450
0.016
0.013
V_GS = 10 V
0.010
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 20 V
6
V_DS = 10 V
4
V_DS = 30 V
300
C_oss
150
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 8 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
2
0.8
0
0.0
2.1
4.2
6.3
8.4
10.5
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65366
S09-2113-Rev. A, 12-Oct-09
www.vishay.com
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