SI7288DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

New Product
Si7288DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
10
0.08
T_J = 150 °C
1
0.06
T_J = 25 °C
0.1
0.04
I_D = 8 A
T_J = 125 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.02
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
70
0.2
- 0.1
- 0.4
- 0.7
I_D = 5 mA
I_D = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
56
42
28
14
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
10
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4
1
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65366
S09-2113-Rev. A, 12-Oct-09