SI7121ADN Datasheet, PDF (5/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by I
DM
Limited by R_DS(on)*
10
100 μs
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
T_A = 25 °C
Single Pulse
0.01
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
40
35
Si7121ADN
Vishay Siliconix
28
30
21
20
14
10
7
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
0
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case

* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2638-Rev. A, 30-Dec-13
5
Document Number: 62930
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