SI7121ADN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
5
V_GS = 10V thru 5V
40
V_GS = 4.5 V
4
V_GS = 4 V
30
3
20
2
Si7121ADN
Vishay Siliconix
T_C = 25 °C
10
V_GS = 3 V
0
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.04
1
0
0
2500
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
0
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
2000
C_iss
1500
1000
500
C_rss
0
0
C_oss
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 12 A
V_DS = 8 V
8
V_DS = 15 V
6
4
V_DS = 24 V
2
1.65
1.4
1.15
0.9
V_GS = 10 V, 7 A
V_GS = 4.5 V, 3 A
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
0.65
V_GS = 6 V, 5 A
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S13-2638-Rev. A, 30-Dec-13
3
Document Number: 62930
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