SI7121ADN Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
0.04
10
0.03
T_J = 150 °C
1
T_J = 25 °C
0.02
0.01
Si7121ADN
Vishay Siliconix
I_D = 7 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2
I_D = 250 μA
1.75
1.5
1.25
1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
120
96
72
48
24
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
S13-2638-Rev. A, 30-Dec-13
4
Document Number: 62930
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