SI7115DN_15 Datasheet, PDF (5/14 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
Si7115DN
Vishay Siliconix
8
6
4
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
39
1.2
26
0.8
13
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73864
www.vishay.com
S11-1908-Rev. C, 26-Sep-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000