SI7115DN_15 Datasheet, PDF (3/14 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
2.0
V_GS = 10 thru 6 V
16
1.6
12
5V
1.2
8
0.8
Si7115DN
Vishay Siliconix
T_C = 125 °C
4
0
0
0.6
4V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
0.0
0
1700
25 °C
- 55 °C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.5
0.4
V_GS = 6 V
0.3
V_GS = 10 V
0.2
0.1
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 3 A
8
6
V_DS = 250 V
V_DS = 100 V
4
V_DS = 75 V
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
1360
C_iss
1020
680
340
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
1.9
I_D = 4 A
1.6
1.3
V_GS = 10 V
V_GS = 6 V
1.0
0.7
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73864
www.vishay.com
S11-1908-Rev. C, 26-Sep-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000