SI7115DN_15 Datasheet, PDF (4/14 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

Si7115DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.0
1.6
T_J = 150 °C
25 °C
10
1.2
1
0.1
0.00
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.7
I_D = 250 µA
0.4
I_D = 5 mA
0.1
0.8
125 °C
0.4
25 °C
0.0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
- 0.2
10
- 0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1
0.1
Limited by R _DS(on)*
100
*Limited by rDS(on)
10
1
0.1
1 ms
10 ms
100 ms
1s
10 s
dc
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
1 ms
10 ms
100 ms
1s
T_A = 25 °C
10 s
0.01 ^{Single Pulse}
DC
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73864
4
S11-1908-Rev. C, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000