SI7100DN Datasheet, PDF (5/14 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.020
150 °C
10
0.016
25 °C
1
0.012
Si7100DN
Vishay Siliconix
I_D = 15 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
0.008
0.004
25 °C
125 °C
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.1
- 0.1
- 0.3
40
30
I_D = 5 mA
20
I_D = 250 µA
10
- 0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS limited
0.01
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73785
S-80581-Rev. C, 17-Mar-08
www.vishay.com
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