SI7100DN Datasheet, PDF (4/14 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

Si7100DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
2.0
V_GS = 5 thru 1.5 V
50
1.6
40
30
20
10
0
0.0
1V
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
0.8
0.4
0.0
0.0
T_C = 125 °C
25 °C
0.3
0.6
- 55 °C
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0040
5000
0.0036
V_GS = 2.5 V
C_iss
4000
0.0032
0.0028
V_GS = 4.5 V
3000
2000
C_rss
1000
C_oss
0.0024
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8.0
I_D = 10 A
6.4
V_DS = 3 V
4.8
V_DS = 4 V
3.2
V_DS = 5 V
1.6
0
0.0
1.6
3.2
4.8
6.4
8.0
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 15 A
1.3
V_GS = 2.5 V
V_GS = 4.5 V
1.1
0.9
0.0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73785
S-80581-Rev. C, 17-Mar-08