SI5853DDC Datasheet, PDF (5/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.4
0.3
Si5853DDC
Vishay Siliconix
I_D = 2.9 A
10
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.2
T_J = 125 °C
0.1
T_J = 25 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
16
12
8
4
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
100 µs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
10 s, 1 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68979
S-82583-Rev. A, 27-Oct-08
www.vishay.com
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