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| SI5853DDC Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode | |||
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New Product
Si5853DDC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.105 at VGS = - 4.5 V
- 4a
- 20
0.143 at VGS = - 2.5 V
- 3.8
0.188 at VGS = - 1.8 V
-3
Qg (Typ.)
4.7 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20
0.46 at 0.5 A
1
1206-8 ChipFET
1
A
K
A
K
S
D
G
D
Marking Code
JH XX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5853DDC-T1-E3 (Lead (Pb)-free)
FEATURES
⢠LITTLE FOOT® Plus Schottky Power MOSFET
APPLICATIONS
RoHS
⢠Charging Switch for Portable Devices
COMPLIANT
- With Integrated Low Vf Trench Schottky Diode
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
VDS
- 20
Reverse Voltage (Schottky)
VKA
20
V
Gate-Source Voltage (MOSFET)
VGS
±8
TC = 25 °C
- 4a
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
- 3.5
- 2.9b, c
TA = 70 °C
- 2.3b, c
Pulsed Drain Current (MOSFET)
IDM
- 10
A
Continuous Source Current (MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
- 2.6
- 1.1b, c
Average Forward Current (Schottky)
IF
1
Pulsed Forward Current (Schottky)
IFM
3
TC = 25 °C
3.1
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
2
1.3b, c
TA = 70 °C
TC = 25 °C
PD
0.8b, c
2.5
W
Maximum Power Dissipation (Schottky)
TC = 70 °C
1.6
TA = 25 °C
1.2
TA = 70 °C
0.76
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
°C
260
Document Number: 68979
S-82583-Rev. A, 27-Oct-08
www.vishay.com
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