SI5853DDC Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5853DDC
Vishay Siliconix
New Product
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
6
4
2
0
0
V_GS = 5 thru 2.5 V
V_GS = 2 V
V_GS = 1.5 V
V_GS = 1 V
1
2
3
4
3
2
T_C = 25 °C
1
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.30
700
0.25
0.20
V_GS = 1.8 V
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 2.9 A
6
V_DS = 10 V
4
V_DS = 16 V
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
600
500
400
C_iss
300
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 2.9 A
1.4
1.3
V_GS = 4.5 V, 2.5 V, 1.8 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 68979
S-82583-Rev. A, 27-Oct-08