SI5459DU-T1 Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
Si5459DU
Vishay Siliconix
12
9
6
3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
15
2.5
12
2.0
9
1.5
6
1.0
3
0.5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_{J (max.)} = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0779-Rev. B, 14-Apr-14
5
Document Number: 65017
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