SI5459DU-T1 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3.0
V_GS = 5 V thru 3 V
2.5
15
2.0
10
5
0
0.0
V_GS = 2.5 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
1.0
0.5
0.0
0.0
0.16
1200
Si5459DU
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
0.08
V_GS = 2.5 V
900
C_iss
600
0.04
V_GS = 4.5 V
0
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
300
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
1.6
I_D = 6.7 A
8
6
4
V_DS = 10 V
V_DS = 16 V
1.5
1.4
V_GS = 4.5 V; I_D = - 6.7 A
1.3
1.2
1.1
1.0
V_GS = 2.5 V; I _D = - 5.3 A
2
0.9
0.8
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S14-0779-Rev. B, 14-Apr-14
3
Document Number: 65017
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