SI5459DU-T1 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si5459DU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
0.12
I_D = - 6.7 A
10
0.09
T_J = 150 °C
T_J = 25 °C
0.06
1
T_J = 125 °C
0.03
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.3
1.2
1.1
1.0
I_D = 250 µA
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1
0.1
T_A = 25 °C
Single Pulse
0.01
BVDSS
Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0779-Rev. B, 14-Apr-14
4
Document Number: 65017
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